By Kenneth L. Ashley
Booklet by way of Ashley, Kenneth L.
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Additional info for Analog electronics with LabVIEW
1(c)] is defined for this condition as the saturation voltage. The transistor is referred to as in the linear (or triode) region or active region for VDS < VDSsat and VDS > VDSsat, respectively. For VDS > VDSsat (active mode of operation), the channel length decreases from L to L' as the reverse-biased depletion region of the drain pn junction increases along the channel (along the oxide – semiconductor interface) [Fig. 1(d)]. The increment VDS – VDSsat drops across the depletion region of the drain pn junction.
8 V to Vtno. In the case of the CMOS array ICs of our lab projects (CD4007), the body effect for the PMOS is significantly less pronounced than for the NMOS (γp < γn), but the parameter for the channel-length-modulation effect is much smaller for the NMOS than for the PMOS (λn < λp). The combination suggests that the chip is a p-well configuration; that is, the NMOS devices are fabricated in "wells" of p-type semiconductor that are fabricated into an n-type substrate. The PMOS devices reside directly in the n-type substrate material.
Both VGG and VSS are negative, since the source is at ground. There is no voltage drop across RG since there is negligible gate current. RG is necessary only to prevent shorting the input signal, Vi. 1. Basic PMOS common-source amplifiers. Single-power-supply amplifier (a) and laboratory amplifier (b) with VSG (= VGG) and VSS controlled by DAQ output channels. Note that either end of the circuit of (a) can be at ground. The two circuits are equivalent, as VGG and RG of Fig. 1b are the Thévenin equivalent of the bias network of the Fig.